diff options
Diffstat (limited to 'nuttx/drivers/mtd/at45db.c')
| -rw-r--r-- | nuttx/drivers/mtd/at45db.c | 46 |
1 files changed, 26 insertions, 20 deletions
diff --git a/nuttx/drivers/mtd/at45db.c b/nuttx/drivers/mtd/at45db.c index c90dd4550..314978e32 100644 --- a/nuttx/drivers/mtd/at45db.c +++ b/nuttx/drivers/mtd/at45db.c @@ -156,6 +156,7 @@ #define AT45DB_DEVID1_8MBIT 0x05 /* xxx0 0101 = 8Mbit AT45DB081 */ #define AT45DB_DEVID1_16MBIT 0x06 /* xxx0 0110 = 16Mbit AT45DB161 */ #define AT45DB_DEVID1_32MBIT 0x07 /* xxx0 0111 = 32Mbit AT45DB321 */ +#define AT45DB_DEVID1_64MBIT 0x08 /* xxx0 1000 = 32Mbit AT45DB641 */ #define AT45DB_DEVID1_FAMMSK 0xe0 /* Bits 5-7: Family */ #define AT45DB_DEVID1_DFLASH 0x20 /* 001x xxxx = Dataflash */ #define AT45DB_DEVID1_AT26DF 0x40 /* 010x xxxx = AT26DFxxx series (Not supported) */ @@ -229,10 +230,10 @@ static int at45db_ioctl(FAR struct mtd_dev_s *mtd, int cmd, unsigned long arg); #define CHIP_ERASE_SIZE 4 static const uint8_t g_chiperase[CHIP_ERASE_SIZE] = {0xc7, 0x94, 0x80, 0x9a}; -/* Sequence to program the device to 512 page size */ +/* Sequence to program the device to binary page sizes{256, 512, 1024} */ -#define CFG512_SIZE 4 -static const uint8_t g_cfg512[CFG512_SIZE] = {0x3d, 0x2a, 0x80, 0xa6}; +#define BINPGSIZE_SIZE 4 +static const uint8_t g_binpgsize[BINPGSIZE_SIZE] = {0x3d, 0x2a, 0x80, 0xa6}; /************************************************************************************ * Private Functions @@ -353,35 +354,42 @@ static inline int at45db_rdid(struct at45db_dev_s *priv) case AT45DB_DEVID1_2MBIT: /* Save the FLASH geometry for the 16Mbit AT45DB021 */ - priv->pageshift = 8; /* Page size = 256 bytes */ + priv->pageshift = 8; /* Page size = 256/264 bytes */ priv->npages = 1024; /* 1024 pages */ return OK; case AT45DB_DEVID1_4MBIT: /* Save the FLASH geometry for the 16Mbit AT45DB041 */ - priv->pageshift = 8; /* Page size = 256 bytes */ + priv->pageshift = 8; /* Page size = 256/264 bytes */ priv->npages = 2048; /* 2048 pages */ return OK; case AT45DB_DEVID1_8MBIT: /* Save the FLASH geometry for the 16Mbit AT45DB081 */ - priv->pageshift = 8; /* Page size = 256 bytes */ + priv->pageshift = 8; /* Page size = 256/264 bytes */ priv->npages = 4096; /* 4096 pages */ return OK; case AT45DB_DEVID1_16MBIT: /* Save the FLASH geometry for the 16Mbit AT45DB161 */ - priv->pageshift = 9; /* Page size = 512 bytes */ + priv->pageshift = 9; /* Page size = 512/528 bytes */ priv->npages = 4096; /* 4096 pages */ return OK; case AT45DB_DEVID1_32MBIT: /* Save the FLASH geometry for the 16Mbit AT45DB321 */ - priv->pageshift = 9; /* Page size = 512 bytes */ + priv->pageshift = 9; /* Page size = 512/528 bytes */ + priv->npages = 8192; /* 8192 pages */ + return OK; + + case AT45DB_DEVID1_64MBIT: + /* Save the FLASH geometry for the 16Mbit AT45DB321 */ + + priv->pageshift = 10; /* Page size = 1024/1056 bytes */ priv->npages = 8192; /* 8192 pages */ return OK; @@ -438,15 +446,13 @@ static inline void at45db_pgerase(struct at45db_dev_s *priv, off_t sector) fvdbg("sector: %08lx\n", (long)sector); - /* The Page Erase command can be used to individually erase any page in the main - * memory array allowing the Buffer to Main Memory Page Program to be utilized at a - * later time. ... To perform a page erase in the binary page size (512 bytes), the - * opcode 81H must be loaded into the device, followed by three address bytes - * consist of 3 don’t care bits, 12 page address bits (A20 - A9) that specify the - * page in the main memory to be erased and 9 don’t care bits. When a low-to-high - * transition occurs on the CS pin, the part will erase the selected page (the - * erased state is a logical 1). ... the status register and the RDY/BUSY pin will - * indicate that the part is busy. + /* "The Page Erase command can be used to individually erase any page in the main + * memory array allowing the Buffer to Main Memory Page Program to be utilized at a + * later time. ... To perform a page erase in the binary page size ..., the + * opcode 81H must be loaded into the device, followed by three address bytes + * ... When a low-to-high transition occurs on the CS pin, the part will erase the + * selected page (the erased state is a logical 1). ... the status register and the + * RDY/BUSY pin will indicate that the part is busy." */ erasecmd[0] = AT45DB_PGERASE; /* Page erase command */ @@ -777,17 +783,17 @@ FAR struct mtd_dev_s *at45db_initialize(FAR struct spi_dev_s *spi) sr = at45db_waitbusy(priv); - /* Check if the device is configured as 512 page device */ + /* Check if the device is configured as 256, 512 or 1024 bytes-per-page device */ if ((sr & AT45DB_SR_PGSIZE) == 0) { - /* No, re-program it for 512 byte pages. NOTE: A power cycle + /* No, re-program it for the binary page size. NOTE: A power cycle * is required after the device has be re-programmed. */ fdbg("Reprogramming page size\n"); SPI_SELECT(priv->spi, SPIDEV_FLASH, true); - SPI_SNDBLOCK(priv->spi, g_cfg512, CFG512_SIZE); + SPI_SNDBLOCK(priv->spi, g_binpgsize, BINPGSIZE_SIZE); SPI_SELECT(priv->spi, SPIDEV_FLASH, false); goto errout; } |